Program at a Glance

KST EEST
Athens
CEST (CET)
Paris
UTC EDT
New York
PDT
Los Angeles

Last update : October 17, 2024 (KST)

Nov. 11
(Mon.)
Time Paradise Hotel Busan
Room A
(Capri Room, 2F)
Room D
(Sidney Room, 2F)
14:00-17:00 Tutorial 1 (in Korean Language)
Technology Trend of Advanced package for AI semiconductor
Dr. Minsuk Suh (Camtek Korea, Korea)
Tutorial 2 (in Korean Language)
Development Trend and Prospect of NAND Memory Device and Process Integration
Prof. Changhan Kim (Hanyang Univ., Korea)
17:00-17:15 Break
17:15-18:15 Short Course (in Korean Language)
The Principle and Device Structure of DRAM
Prof. In-Ho Nam (Hanyang Univ., Korea)
 
18:15-18:30 Break
18:30-20:00 Welcome Reception (Sicily Room, 1F, Paradise Hotel Busan)
Nov. 12
(Tue.)
Time Paradise Hotel Busan Grand Josun Busan 2F Lobby in Paradise Hotel Busan & 5F Lobby in Grand Josun Hotel Busan
Room A
(Capri Room, 2F)
Room B
(Grand Ballroom 1, 2F)
Room C
(Grand Ballroom 3, 2F)
Room D
(Sidney Room, 2F)
Room E
(Sicily Room, 1F)
Room F
(Ballroom, 5F)
Room G
(Meeting Room, 5F)
10:00-10:45 Plenary Session I (Capri Room, 2F in Paradise Hotel Busan)
The Evolution of Metrology & Inspection Technologies in Semiconductor; Past, Present, and Future
Dr. Yusin Yang (Samsung Electronics Co., Ltd., Korea)
Exhibition
10:45-11:00 Coffee Break
11:00-11:30 Opening Ceremony (Grand Ballroom 1, 2, 3, 2F, Paradise Hotel Busan)
11:30-13:00 Lunch
13:00-14:40 TuA1 (CMP) TuB1 (Power)   TuD1 (Litho) TuE1 (Etching) TuF1 (Thin Film) TuG1 (MI)
Advanced Ceria Abrasive Based CMP Power Device I Advanced Lithography I Plasma Surface Interaction Nano Thin Film Deposition I Frontier Metrology and Modeling I
14:40-14:55 Coffee Break
14:55-16:35 TuA2 (CMP) TuB2 (Power)   TuD2 (Litho) TuE2 (Etching) TuF2 (Thin Film) TuG2 (MI)
Challenges and Opportunities in CMP Power Device II Advanced Lithography II Advanced Device and Processes Nano Thin Film Deposition II Frontier Metrology and Modeling II
16:35-16:50 Break
16:50-17:40 Poster Session I
Nov. 13
(Wed.)
Time strong>Paradise Hotel Busan Grand Josun Busan 2F Lobby in Paradise Hotel Busan & 5F Lobby in Grand Josun Hotel Busan
Room A
(Capri Room, 2F)
Room B
(Grand Ballroom 1, 2F)
Room C
(Grand Ballroom 3, 2F)
Room D
(Sidney Room, 2F)
Room E
(Sicily Room, 1F)
Room F
(Ballroom, 5F)
Room G
(Meeting Room, 5F)
09:00-10:40 WeA1 (CMP) WeB1 (Power) WeC1 (PKG) WeD1 (Litho) WeE1 (Etching) WeF1 (Thin Film) WeG1 (MI) Exhibition
CMP Innovations Power Device III Advanced Bonding Technology Lithography Process I Advanced Etching I Nano Thin Film Deposition III Frontier Metrology and Modeling III
10:40-10:55 Coffee Break
10:55-11:40 Plenary Session II (Capri Room, 2F, Paradise Hotel Busan)
Area-Selective Deposition for Advanced Semiconductor Devices
Prof. Gregory Parsons (North Carolina State Univ., USA)
11:40-13:10 Lunch
13:10-13:55 Plenary Session III (Capri Room, 2F, Paradise Hotel Busan)
Wide Bandgap Power Electronics: Challenges and a Path Forward
Prof. Robert Nemanich (Arizona State Univ., USA)
13:55-14:10 Coffee Break
14:10-15:50 WeA2 (CMP) WeB2 (ESG) WeC2 (PKG) WeD2 (Litho) WeE2 (Etching) WeF2 (Thin Film) WeG2 (MI)
Advanced Cu and Mo CMP Carbon Neutrality in Semiconductor Industry I Hybrid Bonding & Evaluations  Lithography Process II Advanced Etching II Nano Thin Film Deposition IV Frontier Metrology and Modeling IV
15:50-16:05 Break
16:05-17:45 WeA3 (CMP)   WeE3 (Etching) WeF3 (Thin Film) WeG3 (MI)
Advanced Cleaning Technology Plasma Source Technology Nano Thin Film Deposition V Frontier Metrology and Modeling V
17:45-18:30 Break
18:30-20:30 Banquet (Grand Ballroom, 2F, Paradise Hotel Busan)
Nov. 14
(Thu.)
Time Paradise Hotel Busan Grand Josun Busan 2F Lobby in Paradise Hotel Busan & 5F Lobby in Grand Josun Hotel Busan
Room A
(Capri Room, 2F)
Room B
(Grand Ballroom 1, 2F)
Room C
(Grand Ballroom 3, 2F)
Room D
(Sidney Room, 2F)
Room E
(Sicily Room, 1F)
Room F
(Ballroom, 5F)
Room G
(Meeting Room, 5F)
09:00-10:40 ThA1 (CMP) ThB1 (ESG) ThC1 (PKG) ThD1 (Litho) ThE1 (Etching) ThF1 (Thin Film) ThG1 (MI) Exhibition
Functional Wet Etching Technology Carbon Neutrality in Semiconductor Industry II Heterogeneous Intergratoin Alternative Lithography I Advanced Etching and Monitoring Nano Thin Film Deposition VI Frontier Metrology and Modeling VI
10:40-10:50 Coffee Break
10:50-12:30 ThA2 (CMP) ThB2 (ESG) ThC2 (PKG) ThD2 (Litho) ThE2 (Etching) ThF2 (Thin Film)  
Cleaning Challenges for the Next Generation Devices Carbon Neutrality in Semiconductor Industry III Process and Intergration Alternative Lithography II Modeling Etch Processes Nano Thin Film Deposition VII
12:30-14:00 Lunch
14:00-14:45 Special Session I (Capri Room, 2F, Paradise Hotel Busan)
Basics of Space Radiation Effects on Microelectronics
Dr. Insoo Jun (NASA JPL, USA)
14:45-15:30 Special Session II (Capri Room, 2F, Paradise Hotel Busan)
Memory Technology 2024 and Outlook: DRAM, NAND, Emerging Memory
Dr. Jeongdong Choe (TechInsights, Canada)
15:30-15:40 Break
15:40-16:25 Plenary Session IV (Capri Room, 2F, Paradise Hotel Busan)
The Role and the Challenge of the Base Material for the Future of Semiconductor Memory Biz
Dr. Deoksin Kil (SK hynix, Korea)
16:25-16:35 Coffee Break
16:35-17:25 Poster Session II
17:25-17:40 Break
17:40-18:10 Closing Ceremony & Award Ceremony (Capri Room, 2F, Paradise Hotel Busan)
Nov. 15
(Fri.)
Time Paradise Hotel Busan Grand Josun Busan 2F Lobby in Paradise Hotel Busan & 5F Lobby in Grand Josun Hotel Busan
Room A
(Capri Room, 2F)
Room B
(Grand Ballroom 1, 2F)
Room C
(Grand Ballroom 3, 2F)
Room D
(Sidney Room, 2F)
Room E
(Sicily Room, 1F)
Room F
(Ballroom, 5F)
Room G
(Meeting Room, 5F)
(Half)
08:30-12:00
(Full)
08:30-17:30
Optional Tour
Topic Sessions
1. Nano Thin Film Deposition TuF1, TuF2, WeF1, WeF2, WeF3, ThF1, ThF2
2. CMP & Cleaning TuA1, TuA2, WeA1, WeA2, WeA3, ThA1, ThA2
3. Advanced Etching Technology TuE1, TuE2, WeE1, WeE2, WeE3, ThE1, ThE2
4. Advanced Lithography + Patterning TuD1, TuD2, WeD1, WeD2, ThD1, ThD2
5. Post Fabrication Technology and System Packaging WeC1, WeC2, ThC1, ThC2
6. Frontier Metrology, Diagnosis, and Modeling for Nanoscale IC Integration and Emerging Device Process TuG1, TuG2, WeG1, WeG2, WeG3, ThG1, ThG2
7. Power Device TuB1, TuB2, WeB1
8. Carbon Neutrality in Semiconductor Industry WeB2, ThB1, ThB2